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TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X
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TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X

TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X

Product details

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

43A

Transistor Case Style

TO-220

Rds(on) Test Voltage

10V

Power Dissipation

53W

Operating Temperature Max

150°C

Qualification

-

Drain Source Voltage Vds

60V

Drain Source On State Resistance

0.0122ohm

Transistor Mounting

Through Hole

Gate Source Threshold Voltage Max

4V

No. of Pins

3Pins

Product Range

-

Other details

Brand TOSHIBA
Part Number TK30E06N1,S1X(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$0.72

Original: $2.39

-70%
TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X

$2.39

$0.72

TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X

Product details

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

43A

Transistor Case Style

TO-220

Rds(on) Test Voltage

10V

Power Dissipation

53W

Operating Temperature Max

150°C

Qualification

-

Drain Source Voltage Vds

60V

Drain Source On State Resistance

0.0122ohm

Transistor Mounting

Through Hole

Gate Source Threshold Voltage Max

4V

No. of Pins

3Pins

Product Range

-

Other details

Brand TOSHIBA
Part Number TK30E06N1,S1X(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

43A

Transistor Case Style

TO-220

Rds(on) Test Voltage

10V

Power Dissipation

53W

Operating Temperature Max

150°C

Qualification

-

Drain Source Voltage Vds

60V

Drain Source On State Resistance

0.0122ohm

Transistor Mounting

Through Hole

Gate Source Threshold Voltage Max

4V

No. of Pins

3Pins

Product Range

-

Other details

Brand TOSHIBA
Part Number TK30E06N1,S1X(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
TOSHIBA TK30E06N1,S1X(S Power MOSFET, N Channel, 60 V, 43 A, 0.0122 ohm, TO-220, Through Hole TK30E06N1, TK30E06N1,S1X | Tanotis