ONSEMI FQP47P06 Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-220, Through Hole
Product Overview
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 84nC)
- Low Crss (typical 320pF)
- 100% avalanche tested
- ±25V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.94°C/W thermal resistance, junction to case
Product details
Other details
| Brand | ONSEMI |
| Part Number | FQP47P06 |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Original: $5.82
-70%$5.82
$1.75ONSEMI FQP47P06 Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-220, Through Hole
Product Overview
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 84nC)
- Low Crss (typical 320pF)
- 100% avalanche tested
- ±25V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.94°C/W thermal resistance, junction to case
Product details
Other details
| Brand | ONSEMI |
| Part Number | FQP47P06 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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Description
Product Overview
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 84nC)
- Low Crss (typical 320pF)
- 100% avalanche tested
- ±25V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.94°C/W thermal resistance, junction to case
Product details
Other details
| Brand | ONSEMI |
| Part Number | FQP47P06 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
