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INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module
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INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module

INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module

Product details

Technical Specifications

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MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id
420A
Open menu
Drain Source On State Resistance

0.00191ohm

No. of Pins

11Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type
Dual N Channel
Open menu
Drain Source Voltage Vds

1.2kV

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

EconoDUAL 3 Series

Other details

Brand INFINEON
Part Number FF1MR12MM1HB11BPSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$218.81

Original: $729.37

-70%
INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module

$729.37

$218.81

INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id
420A
Open menu
Drain Source On State Resistance

0.00191ohm

No. of Pins

11Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type
Dual N Channel
Open menu
Drain Source Voltage Vds

1.2kV

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

EconoDUAL 3 Series

Other details

Brand INFINEON
Part Number FF1MR12MM1HB11BPSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id
420A
Open menu
Drain Source On State Resistance

0.00191ohm

No. of Pins

11Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type
Dual N Channel
Open menu
Drain Source Voltage Vds

1.2kV

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

EconoDUAL 3 Series

Other details

Brand INFINEON
Part Number FF1MR12MM1HB11BPSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON FF1MR12MM1HB11BPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 420 A, 1.2 kV, 0.00191 ohm, Module | Tanotis