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INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module

INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module

INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module

Product details

Technical Specifications

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MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

390A

Open menu

Drain Source On State Resistance

0.00147ohm

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No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

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Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

Open menu

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF1MR12KM1HHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

$813.87

INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module—

$813.87

INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module

Product details

Technical Specifications

Find similar products

MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

390A

Open menu

Drain Source On State Resistance

0.00147ohm

Open menu

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products

Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

Open menu

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF1MR12KM1HHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products

MOSFET Module Configuration

Half Bridge

Continuous Drain Current Id

390A

Open menu

Drain Source On State Resistance

0.00147ohm

Open menu

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.15V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products

Channel Type

Dual N Channel

Drain Source Voltage Vds

1.2kV

Open menu

Transistor Case Style

Module

Rds(on) Test Voltage

18V

Power Dissipation

-

Product Range

62mm C Series

Other details

Brand	INFINEON
Part Number	FF1MR12KM1HHPSA1
Quantity	Each
Technical Data Sheet EN

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

INFINEON FF1MR12KM1HHPSA1 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 390 A, 1.2 kV, 0.00147 ohm, Module | Tanotis