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BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin
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BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin

BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin

AFBR-S4N44P014M is a single-channel silicon photo multiplier (SiPM) used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology, which combines best-in-class photodetection efficiency (PDE) with decreased dark count rate and reduced crosstalk when compared to the NUV-HD technology. The SPAD pitch is 40μm. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. It is used in applications such as X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, photon counting X-ray, safety and security, physics experiments, cherenkov detection.
  • High PDE (63% at 420nm), 4-side tileable, with high fill factors
  • Highly transparent epoxy protection layer, excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage and gain between devices
  • Photo-detection efficiency is 63% typical
  • Spectral range is 250nm typical
  • Breakdown voltage is 32.5V typical
  • Temperature coefficient of breakdown voltage is 30mV/°C typical
  • Nominal terminal capacitance is 580pF typical
  • Operating temperature range from -20°C to +60°C

Product details

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Brand BROADCOM
Part Number AFBR-S4N44P014M
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$41.86
BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin
$41.86

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BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin - Image 2

BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin

AFBR-S4N44P014M is a single-channel silicon photo multiplier (SiPM) used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology, which combines best-in-class photodetection efficiency (PDE) with decreased dark count rate and reduced crosstalk when compared to the NUV-HD technology. The SPAD pitch is 40μm. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. It is used in applications such as X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, photon counting X-ray, safety and security, physics experiments, cherenkov detection.
  • High PDE (63% at 420nm), 4-side tileable, with high fill factors
  • Highly transparent epoxy protection layer, excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage and gain between devices
  • Photo-detection efficiency is 63% typical
  • Spectral range is 250nm typical
  • Breakdown voltage is 32.5V typical
  • Temperature coefficient of breakdown voltage is 30mV/°C typical
  • Nominal terminal capacitance is 580pF typical
  • Operating temperature range from -20°C to +60°C

Product details

Other details

Brand BROADCOM
Part Number AFBR-S4N44P014M
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

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Description

AFBR-S4N44P014M is a single-channel silicon photo multiplier (SiPM) used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology, which combines best-in-class photodetection efficiency (PDE) with decreased dark count rate and reduced crosstalk when compared to the NUV-HD technology. The SPAD pitch is 40μm. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. It is used in applications such as X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, photon counting X-ray, safety and security, physics experiments, cherenkov detection.
  • High PDE (63% at 420nm), 4-side tileable, with high fill factors
  • Highly transparent epoxy protection layer, excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage and gain between devices
  • Photo-detection efficiency is 63% typical
  • Spectral range is 250nm typical
  • Breakdown voltage is 32.5V typical
  • Temperature coefficient of breakdown voltage is 30mV/°C typical
  • Nominal terminal capacitance is 580pF typical
  • Operating temperature range from -20°C to +60°C

Product details

Other details

Brand BROADCOM
Part Number AFBR-S4N44P014M
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin | Tanotis