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Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$42.07
Original: $140.24
-70%Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins—
$140.24
$42.07Micron MT53E256M32D2FW-046 AATB Dram Mobile LPDDR4 8 Gbit 256M x 32bit 2.133 GHz Tfbga 200 Pins
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
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Description
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (�0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is -40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand | MICRON |
| Part Number | MT53E256M32D2FW-046 AATB |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
